SI4630DY-T1-GE3

SI4630, SI4630DY-T1-E3, SI4630DY-T1-GE3

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Description

Parameters

ParameterSI4630DY-T1-E3SI4630DY-T1-GE3
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<7.8 W
Input capacitance of field effect transistor
Ciss
6.67 nFVds = 15V
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
<40 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.7 mΩId, Vgs = 20A, 10V
MOSFET series
Series
TrenchFET®(not set)
Gate charge
QG
161 nCVgs = 10V
FET Feature
FET Feature
Standard