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| Parameter | SI4448DY-T1-E3 | |
|---|---|---|
IC package | Package | 8-SOIC (3.9mm Width) |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <7.8 W |
Input capacitance of field effect transistor | Ciss | 12.35 nFVds = 6V |
Continuous voltage between drain and source | UDSS | <12 V |
Continuous drain current | IDSS | <50 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <1.7 mΩId, Vgs = 20A, 4.5V |
Gate charge | QG | 150 nCVgs = 4.5V |
FET Feature | FET Feature | Standard |