SI4435

SI4435, SI4435BDY-T1-E3, SI4435DDY-T1-GE3, SI4435DY, SI4435DYPBF, SI4435DYTR, SI4435DYTRPBF

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Description

Parameters

Parameter		SI4435BDY-T1-E3	SI4435DDY-T1-GE3	SI4435DY	SI4435DYPBF	SI4435DYTR	SI4435DYTRPBF
IC package	Package	8-SOIC (3.9mm Width)
Manufacturer	Manufacturer	Vishay/Siliconix	Vishay/Siliconix	International Rectifier	International Rectifier	International Rectifier	International Rectifier
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<1.5 W	<5 W	<2.5 W	<2.5 W	<2.5 W	<2.5 W
Input capacitance of field effect transistor	C_iss	(not set)	1.35 nFVds = 15V	2.32 nFVds = 15V	2.32 nFVds = 15V	2.32 nFVds = 15V	2.32 nFVds = 15V
Continuous voltage between drain and source	U_DSS	<30 V
Continuous drain current	I_DSS	<7 A	<11.4 A	<8 A	<8 A	<8 A	<8 A
FET channel type	Channel	P-ch
Channel resistance at ON state	R_DS-ON	<20 mΩId, Vgs = 9.1A, 10V	<24 mΩId, Vgs = 9.1A, 10V	<20 mΩId, Vgs = 8A, 10V	<20 mΩId, Vgs = 8A, 10V	<20 mΩId, Vgs = 8A, 10V	<20 mΩId, Vgs = 8A, 10V
MOSFET series	Series	TrenchFET®	(not set)	HEXFET®	HEXFET®	HEXFET®	HEXFET®
Gate charge	Q_G	70 nCVgs = 10V	50 nCVgs = 10V	60 nCVgs = 10V	60 nCVgs = 10V	60 nCVgs = 10V	60 nCVgs = 10V
FET Feature	FET Feature	Logic Level Gate	Standard	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate