SI4431

SI4431, SI4431BDY-T1-E3, SI4431CDY-T1-GE3

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Description

Parameters

ParameterSI4431BDY-T1-E3SI4431CDY-T1-GE3
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.5 W<4.2 W
Input capacitance of field effect transistor
Ciss
(not set)1.006 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<5.7 A<9 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<30 mΩId, Vgs = 7.5A, 10V<32 mΩId, Vgs = 7A, 10V
MOSFET series
Series
TrenchFET®(not set)
Gate charge
QG
20 nCVgs = 5V38 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateStandard