SI4420BDY-T1-GE3

SI4420, SI4420BDY-T1-E3, SI4420BDY-T1-GE3, SI4420DY, SI4420DY,518, SI4420DYPBF, SI4420DYTR, SI4420DYTRPBF

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Description

Parameters

ParameterSI4420BDY-T1-E3SI4420BDY-T1-GE3SI4420DYSI4420DY,518SI4420DYPBFSI4420DYTRSI4420DYTRPBF
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Vishay/SiliconixVishay/SiliconixInternational RectifierNXP SemiconductorsInternational RectifierInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.4 W<1.4 W<2.5 W<2.5 W<2.5 W<2.5 W<2.5 W
Input capacitance of field effect transistor
Ciss
(not set)(not set)2.24 nFVds = 15V(not set)2.24 nFVds = 15V2.24 nFVds = 15V2.24 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<9.5 A<9.5 A<12.5 A<12.5 A<12.5 A<12.5 A<12.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<8.5 mΩId, Vgs = 13.5A, 10V<8.5 mΩId, Vgs = 13.5A, 10V<9 mΩId, Vgs = 12.5A, 10V<9 mΩId, Vgs = 12.5A, 10V<9 mΩId, Vgs = 12.5A, 10V<9 mΩId, Vgs = 12.5A, 10V<9 mΩId, Vgs = 12.5A, 10V
MOSFET series
Series
TrenchFET®(not set)HEXFET®TrenchMOS™HEXFET®HEXFET®HEXFET®
Gate charge
QG
50 nCVgs = 10V50 nCVgs = 10V78 nCVgs = 10V120 nCVgs = 10V78 nCVgs = 10V78 nCVgs = 10V78 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate