SI4410DY,518

SI4410, SI4410DY, SI4410DY,518, SI4410DYPBF, SI4410DYTR, SI4410DYTRPBF

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Description

Parameters

ParameterSI4410DYSI4410DY,518SI4410DYPBFSI4410DYTRSI4410DYTRPBF
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Fairchild SemiconductorNXP SemiconductorsInternational RectifierInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1 W<2.5 W<2.5 W<2.5 W<2.5 W
Input capacitance of field effect transistor
Ciss
1.35 nFVds = 15V(not set)1.585 nFVds = 15V1.585 nFVds = 15V1.585 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<13.5 mΩId, Vgs = 10A, 10V
MOSFET series
Series
PowerTrench®TrenchMOS™HEXFET®HEXFET®HEXFET®
Gate charge
QG
60 nCVgs = 10V34 nCVgs = 5V45 nCVgs = 10V45 nCVgs = 10V45 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate