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| Parameter | SI3853DV-T1-E3 | |
|---|---|---|
IC package | Package | 6-TSOP |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <830 mW |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <1.6 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <200 mΩId, Vgs = 1.8A, 4.5V |
Gate charge | QG | 4 nCVgs = 4.5V |
FET Feature | FET Feature | Diode (Isolated) |