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| Parameter | SI3457BDV-T1-E3 | SI3457DV | |
|---|---|---|---|
IC package | Package | 6-TSOP | 6-SSOT, SuperSOT-6 |
Manufacturer | Manufacturer | Vishay/Siliconix | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.14 W | <800 mW |
Input capacitance of field effect transistor | Ciss | (not set) | 470 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V | |
Continuous drain current | IDSS | <3.7 A | <4 A |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <54 mΩId, Vgs = 5A, 10V | <50 mΩId, Vgs = 4A, 10V |
MOSFET series | Series | TrenchFET® | PowerTrench® |
Gate charge | QG | 19 nCVgs = 10V | 8.1 nCVgs = 5V |
FET Feature | FET Feature | Logic Level Gate | |