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| Parameter | SI3446ADV-T1-E3 | |
|---|---|---|
IC package | Package | 6-TSOP |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <3.2 W |
Input capacitance of field effect transistor | Ciss | 640 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <6 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <37 mΩId, Vgs = 5.8A, 4.5V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 20 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |