SI3443BDV-T1-E3

SI3443, SI3443BDV-T1-E3, SI3443DV, SI3443DVTR, SI3443DVTRPBF

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Description

Parameters

ParameterSI3443BDV-T1-E3SI3443DVSI3443DVTRSI3443DVTRPBF
IC package
Package
6-TSOP6-SSOT, SuperSOT-6Micro6™(TSOP-6)6-TSOP
Manufacturer
Manufacturer
Vishay/SiliconixFairchild SemiconductorInternational RectifierInternational Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.1 W<800 mW<2 W<2 W
Input capacitance of field effect transistor
Ciss
(not set)640 pFVds = 10V1.079 nFVds = 10V1.079 nFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<3.6 A<4 A<4.4 A<4.4 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<60 mΩId, Vgs = 4.7A, 4.5V<65 mΩId, Vgs = 4A, 4.5V<65 mΩId, Vgs = 4.4A, 4.5V<65 mΩId, Vgs = 4.4A, 4.5V
MOSFET series
Series
TrenchFET®PowerTrench®HEXFET®HEXFET®
Gate charge
QG
9 nCVgs = 4.5V10 nCVgs = 4.5V15 nCVgs = 4.5V15 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate