SI3442DV

SI3442, SI3442BDV-T1-E3, SI3442DV

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Description

Parameters

ParameterSI3442BDV-T1-E3SI3442DV
IC package
Package
6-TSOP6-SSOT, SuperSOT-6
Manufacturer
Manufacturer
Vishay/SiliconixFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<860 mW<800 mW
Input capacitance of field effect transistor
Ciss
295 pFVds = 10V365 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<3 A<4.1 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<57 mΩId, Vgs = 4A, 4.5V<60 mΩId, Vgs = 4.1A, 4.5V
Gate charge
QG
5 nCVgs = 4.5V14 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate