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| Parameter | SI2333CDS-T1-E3 | SI2333DS-T1-E3 | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <2.5 W | <750 mW |
Input capacitance of field effect transistor | Ciss | 1.225 nFVds = 6V | 1.1 nFVds = 6V |
Continuous voltage between drain and source | UDSS | <12 V | |
Continuous drain current | IDSS | <7.1 A | <4.1 A |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <35 mΩId, Vgs = 5.1A, 4.5V | <32 mΩId, Vgs = 5.3A, 4.5V |
MOSFET series | Series | (not set) | TrenchFET® |
Gate charge | QG | 25 nCVgs = 4.5V | 18 nCVgs = 4.5V |
FET Feature | FET Feature | Standard | Logic Level Gate |