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| Parameter | SI2316BDS-T1-GE3 | SI2316DS-T1-E3 | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.66 W | <700 mW |
Input capacitance of field effect transistor | Ciss | 350 pFVds = 15V | 215 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V | |
Continuous drain current | IDSS | <4.5 A | <2.9 A |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <50 mΩId, Vgs = 3.9A, 10V | <50 mΩId, Vgs = 3.4A, 10V |
MOSFET series | Series | (not set) | TrenchFET® |
Gate charge | QG | 9.6 nCVgs = 10V | 7 nCVgs = 10V |
FET Feature | FET Feature | Standard | Logic Level Gate |