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| Parameter | SI2312BDS-T1-E3 | SI2312BDS-T1-GE3 | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <750 mW | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <3.9 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <31 mΩId, Vgs = 5A, 4.5V | |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 12 nCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |