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| Parameter | SI2307BDS-T1-E3 | SI2307CDS-T1-GE3 | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <750 mW | <1.8 W |
Input capacitance of field effect transistor | Ciss | 380 pFVds = 15V | 340 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V | |
Continuous drain current | IDSS | <2.5 A | <3.5 A |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <78 mΩId, Vgs = 3.2A, 10V | <88 mΩId, Vgs = 3.5A, 10V |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 15 nCVgs = 10V | 6.2 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate | Standard |