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| Parameter | SI2305ADS-T1-GE3 | SI2305DS-T1-E3 | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.7 W | <1.25 W |
Input capacitance of field effect transistor | Ciss | 740 pFVds = 4V | 1.245 nFVds = 4V |
Continuous voltage between drain and source | UDSS | <8 V | |
Continuous drain current | IDSS | <5.4 A | <3.5 A |
FET channel type | Channel | P-ch | |
Channel resistance at ON state | RDS-ON | <40 mΩId, Vgs = 4.1A, 4.5V | <52 mΩId, Vgs = 3.5A, 4.5V |
MOSFET series | Series | (not set) | TrenchFET® |
Gate charge | QG | 15 nCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |