This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | SI2304BDS-T1-E3 | SI2304BDS-T1-GE3 | SI2304DS,215 | |
|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | ||
Manufacturer | Manufacturer | Vishay/Siliconix | Vishay/Siliconix | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <750 mW | <750 mW | <830 mW |
Input capacitance of field effect transistor | Ciss | 225 pFVds = 15V | 225 pFVds = 15V | 195 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <30 V | ||
Continuous drain current | IDSS | <2.6 A | <2.6 A | <1.7 A |
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <70 mΩId, Vgs = 2.5A, 10V | <70 mΩId, Vgs = 2.5A, 10V | <117 mΩId, Vgs = 500mA, 10V |
MOSFET series | Series | (not set) | (not set) | TrenchMOS™ |
Gate charge | QG | 4 nCVgs = 5V | 4 nCVgs = 5V | 4.6 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate | ||