SI2302-TP

SI2302, SI2302ADS-T1-E3, SI2302CDS-T1-GE3, SI2302DS,215, SI2302-TP

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Description

Parameters

ParameterSI2302ADS-T1-E3SI2302CDS-T1-GE3SI2302DS,215SI2302-TP
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23
Manufacturer
Manufacturer
Vishay/SiliconixVishay/SiliconixNXP SemiconductorsMicro Commercial Co
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<700 mW<710 mW<830 mW<1.25 W
Input capacitance of field effect transistor
Ciss
300 pFVds = 10V(not set)230 pFVds = 10V237 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.1 A<2.6 A<2.5 A<3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<60 mΩId, Vgs = 3.6A, 4.5V<57 mΩId, Vgs = 3.6A, 4.5V<85 mΩId, Vgs = 3.6A, 4.5V<72 mΩId, Vgs = 3.6A, 4.5V
MOSFET series
Series
(not set)(not set)TrenchMOS™(not set)
Gate charge
QG
10 nCVgs = 4.5V5.5 nCVgs = 4.5V10 nCVgs = 4.5V10 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate