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| Parameter | SI2301BDS-T1-E3 | SI2301CDS-T1-GE3 | SI2301-TP | |
|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SOT-23 |
Manufacturer | Manufacturer | Vishay/Siliconix | Vishay/Siliconix | Micro Commercial Co |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <700 mW | <1.6 W | <1.25 W |
Input capacitance of field effect transistor | Ciss | 375 pFVds = 6V | 405 pFVds = 10V | 880 pFVds = 6V |
Continuous voltage between drain and source | UDSS | <20 V | ||
Continuous drain current | IDSS | <2.2 A | <3.1 A | <2.8 A |
FET channel type | Channel | P-ch | ||
Channel resistance at ON state | RDS-ON | <100 mΩId, Vgs = 2.8A, 4.5V | <112 mΩId, Vgs = 2.8A, 4.5V | <120 mΩId, Vgs = 2.8A, 4.5V |
Gate charge | QG | 10 nCVgs = 4.5V | 10 nCVgs = 4.5V | 14.5 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate | Standard | Logic Level Gate |