SI1450DH-T1-E3

SI1450, SI1450DH-T1-E3

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Description

Parameters

ParameterSI1450DH-T1-E3
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.78 W
Input capacitance of field effect transistor
Ciss
535 pFVds = 4V
Continuous voltage between drain and source
UDSS
<8 V
Continuous drain current
IDSS
<6.04 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<47 mΩId, Vgs = 4A, 4.5V
MOSFET series
Series
TrenchFET®
Gate charge
QG
7.05 nCVgs = 5V
FET Feature
FET Feature
Standard