SI1330EDL-T1-E3

SI1330, SI1330EDL-T1-E3

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterSI1330EDL-T1-E3
IC package
Package
SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<280 mW
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<240 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.5 ΩId, Vgs = 250mA, 10V
MOSFET series
Series
TrenchFET®
Gate charge
QG
600 pCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate