SI1300

SI1300, SI1300BDL-T1-E3

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Description

Parameters

ParameterSI1300BDL-T1-E3
IC package
Package
SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<200 mW
Input capacitance of field effect transistor
Ciss
35 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<400 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<850 mΩId, Vgs = 250mA, 4.5V
MOSFET series
Series
TrenchFET®
Gate charge
QG
840 pCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate