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| Parameter | SI1073X-T1-GE3 | |
|---|---|---|
IC package | Package | SC-89-6, SOT-563F, SOT-666 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <236 mW |
Input capacitance of field effect transistor | Ciss | 265 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <980 mA |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <173 mΩId, Vgs = 980mA, 10V |
Gate charge | QG | 9.45 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |