SI1071X-T1-GE3

SI1071, SI1071X-T1-E3, SI1071X-T1-GE3

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterSI1071X-T1-E3SI1071X-T1-GE3
IC package
Package
SC-89-6, SOT-563F, SOT-666
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<236 mW
Input capacitance of field effect transistor
Ciss
315 pFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<960 mA
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<167 mΩId, Vgs = 960mA, 10V
MOSFET series
Series
TrenchFET®(not set)
Gate charge
QG
6.64 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate