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| Parameter | SI1056X-T1-E3 | |
|---|---|---|
IC package | Package | SC-89-6, SOT-563F, SOT-666 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <236 mW |
Input capacitance of field effect transistor | Ciss | 400 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <1.32 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <89 mΩId, Vgs = 1.32A, 4.5V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 8.7 nCVgs = 5V |
FET Feature | FET Feature | Logic Level Gate |