This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | SI1051X-T1-GE3 | |
|---|---|---|
IC package | Package | SC-89-6, SOT-563F, SOT-666 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <236 mW |
Input capacitance of field effect transistor | Ciss | 560 pFVds = 4V |
Continuous voltage between drain and source | UDSS | <8 V |
Continuous drain current | IDSS | <1.2 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <122 mΩId, Vgs = 1.2A, 4.5V |
Gate charge | QG | 9.45 nCVgs = 5V |
FET Feature | FET Feature | Logic Level Gate |