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| Parameter | SI1022R-T1-E3 | SI1022R-T1-GE3 | |
|---|---|---|---|
IC package | Package | SC-75-3, SOT-416, EMT3, 3-SSMini | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <250 mW | |
Input capacitance of field effect transistor | Ciss | 30 pFVds = 25V | |
Continuous voltage between drain and source | UDSS | <60 V | |
Continuous drain current | IDSS | <330 mA | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <1.25 ΩId, Vgs = 500mA, 10V | |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 600 pCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |