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| Parameter | SI1021R-T1-E3 | |
|---|---|---|
IC package | Package | SC-75-3, SOT-416, EMT3, 3-SSMini |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <250 mW |
Input capacitance of field effect transistor | Ciss | 23 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <190 mA |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <4 ΩId, Vgs = 500mA, 10V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 1.7 nCVgs = 15V |
FET Feature | FET Feature | Logic Level Gate |