SI1013R-T1-GE3

SI1013R, SI1013R-T1-E3, SI1013R-T1-GE3

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Description

Parameters

ParameterSI1013R-T1-E3SI1013R-T1-GE3
IC package
Package
SC-75-3, SOT-416, EMT3, 3-SSMini
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<150 mW
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<350 mA
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<1.2 ΩId, Vgs = 350mA, 4.5V
MOSFET series
Series
TrenchFET®(not set)
Gate charge
QG
1.5 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate