SI1012

SI1012, SI1012X-T1-E3, SI1012X-T1-GE3

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Description

Parameters

ParameterSI1012X-T1-E3SI1012X-T1-GE3
IC package
Package
SC-89-3
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<250 mW
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<500 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<700 mΩId, Vgs = 600mA, 4.5V
Gate charge
QG
750 pCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate