RZF030P01

RZF030P01, RZF030P01TL

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Description

Parameters

ParameterRZF030P01TL
IC package
Package
TUMT3
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<800 mW
Input capacitance of field effect transistor
Ciss
1.86 nFVds = 6V
Continuous voltage between drain and source
UDSS
<12 V
Continuous drain current
IDSS
<3 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<39 mΩId, Vgs = 3A, 4.5V
Gate charge
QG
18 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate