RTR020N05

RTR020N05, RTR020N05TL

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Description

Parameters

ParameterRTR020N05TL
IC package
Package
TSMT3
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1 W
Input capacitance of field effect transistor
Ciss
200 pFVds = 10V
Continuous voltage between drain and source
UDSS
<45 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<180 mΩId, Vgs = 2A, 4.5V
Gate charge
QG
4.1 nCVgs = 4.5V
FET Feature
FET Feature
Standard