RTQ045N03

RTQ045N03, RTQ045N03TR

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Description

Parameters

ParameterRTQ045N03TR
IC package
Package
TSMT6
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W
Input capacitance of field effect transistor
Ciss
540 pFVds = 10V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<4.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<43 mΩId, Vgs = 4.5A, 4.5V
Gate charge
QG
10.7 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate