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| Parameter | RTQ020N03TR | |
|---|---|---|
IC package | Package | TSMT6 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1.25 W |
Input capacitance of field effect transistor | Ciss | 135 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <2 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <125 mΩId, Vgs = 2A, 4.5V |
Gate charge | QG | 3.3 nCVgs = 4.5V |
FET Feature | FET Feature | Standard |