RTF015N03

RTF015N03, RTF015N03TL

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Description

Parameters

ParameterRTF015N03TL
IC package
Package
TUMT3
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<800 mW
Input capacitance of field effect transistor
Ciss
80 pFVds = 10V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<1.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<240 mΩId, Vgs = 1.5A, 4.5V
Gate charge
QG
2.2 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate