RT1A050ZPTR

RT1A050, RT1A050ZPTR

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Description

Parameters

ParameterRT1A050ZPTR
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W
Input capacitance of field effect transistor
Ciss
2.8 nFVds = 6V
Continuous voltage between drain and source
UDSS
<12 V
Continuous drain current
IDSS
<5 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<26 mΩId, Vgs = 5A, 4.5V
Gate charge
QG
34 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate