RSF010P03TL

RSF010P03, RSF010P03TL

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Description

Parameters

ParameterRSF010P03TL
IC package
Package
TUMT3
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<800 mW
Input capacitance of field effect transistor
Ciss
120 pFVds = 10V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<1 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<350 mΩId, Vgs = 1A, 10V
Gate charge
QG
1.9 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate