RSD200N10TL

RSD200N10, RSD200N10TL

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Description

Parameters

ParameterRSD200N10TL
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<20 W
Input capacitance of field effect transistor
Ciss
2.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<52 mΩId, Vgs = 10A, 10V
Gate charge
QG
48.5 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate