RRS110N03

RRS110N03, RRS110N03TB1

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Description

Parameters

ParameterRRS110N03TB1
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
2 nFVds = 10V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<12.6 mΩId, Vgs = 11A, 10V
Gate charge
QG
33 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate