RHU002N06

RHU002N06, RHU002N06T106

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Description

Parameters

ParameterRHU002N06T106
IC package
Package
SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<200 mW
Input capacitance of field effect transistor
Ciss
15 pFVds = 10V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<200 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.4 ΩId, Vgs = 200mA, 10V
Gate charge
QG
4.4 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate