RFP12N10

RFP12N10, RFP12N10L

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Description

Parameters

ParameterRFP12N10L
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<60 W
Input capacitance of field effect transistor
Ciss
900 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<200 mΩId, Vgs = 12A, 5V
FET Feature
FET Feature
Logic Level Gate