RFG60P05E

RFG60P05, RFG60P05E

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Description

Parameters

ParameterRFG60P05E
IC package
Package
TO-247-3
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<215 W
Input capacitance of field effect transistor
Ciss
7.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<50 V
Continuous drain current
IDSS
<60 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<30 mΩId, Vgs = 60A, 10V
Gate charge
QG
450 nCVgs = 20V
FET Feature
FET Feature
Standard