QS5U36TR

QS5U36, QS5U36TR

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Description

Parameters

ParameterQS5U36TR
IC package
Package
TSMT5
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<900 mW
Input capacitance of field effect transistor
Ciss
280 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<81 mΩId, Vgs = 2.5A, 4.5V
FET Feature
FET Feature
Diode (Isolated)