QS5U28

QS5U28, QS5U28TR

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterQS5U28TR
IC package
Package
TSMT5
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<900 mW
Input capacitance of field effect transistor
Ciss
450 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<125 mΩId, Vgs = 2A, 4.5V
Gate charge
QG
4.8 nCVgs = 4.5V
FET Feature
FET Feature
Diode (Isolated)