QS5U17

QS5U17, QS5U17TR

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Description

Parameters

ParameterQS5U17TR
IC package
Package
TSMT5
Manufacturer
Manufacturer
Rohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<900 mW
Input capacitance of field effect transistor
Ciss
175 pFVds = 10V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<100 mΩId, Vgs = 2A, 4.5V
Gate charge
QG
3.9 nCVgs = 4.5V
FET Feature
FET Feature
Diode (Isolated)