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| Parameter | PSMN1R6-30PL,127 | |
|---|---|---|
IC package | Package | TO-220AB-3 |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <306 W |
Input capacitance of field effect transistor | Ciss | 12.493 nFVds = 12V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <100 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <1.7 mΩId, Vgs = 25A, 10V |
Gate charge | QG | 212 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |