PSMN005-25D,118

PSMN005, PSMN005-25D,118, PSMN005-30K,518, PSMN005-55B,118, PSMN005-55P,127, PSMN005-75B,118, PSMN005-75P,127

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Description

Parameters

ParameterPSMN005-25D,118PSMN005-30K,518PSMN005-55B,118PSMN005-55P,127PSMN005-75B,118PSMN005-75P,127
IC package
Package
DPak, TO-252 (2 leads+tab), SC-638-SOIC (3.9mm Width)D²Pak, TO-263 (2 leads + tab)TO-220AB-3D²Pak, TO-263 (2 leads + tab)TO-220AB-3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountSurface mountThrough-holeSurface mountThrough-hole
Power dissipation
P
<125 W<3.5 W<230 W<230 W<230 W<230 W
Input capacitance of field effect transistor
Ciss
3.5 nFVds = 20V3.1 nFVds = 25V6.5 nFVds = 25V6.5 nFVds = 25V8.25 nFVds = 25V8.25 nFVds = 25V
Continuous voltage between drain and source
UDSS
<25 V<30 V<55 V<55 V<75 V<75 V
Continuous drain current
IDSS
<75 A<20 A<75 A<75 A<75 A<75 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5.8 mΩId, Vgs = 25A, 10V<5.5 mΩId, Vgs = 15A, 10V<5.8 mΩId, Vgs = 25A, 10V<5.8 mΩId, Vgs = 25A, 10V<5 mΩId, Vgs = 25A, 10V<5 mΩId, Vgs = 25A, 10V
MOSFET series
Series
TrenchMOS™
Gate charge
QG
60 nCVgs = 5V34 nCVgs = 4.5V103 nCVgs = 5V103 nCVgs = 5V165 nCVgs = 10V165 nCVgs = 10V
FET Feature
FET Feature
Logic Level GateLogic Level GateLogic Level GateLogic Level GateStandardStandard