PMF780

PMF780, PMF780SN,115

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Description

Parameters

ParameterPMF780SN,115
IC package
Package
SC-70-3, SOT-323-3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<560 mW
Input capacitance of field effect transistor
Ciss
23 pFVds = 30V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<570 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<920 mΩId, Vgs = 300mA, 10V
MOSFET series
Series
TrenchMOS™
Gate charge
QG
1.05 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate