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| Parameter | PHU11NQ10T,127 | |
|---|---|---|
IC package | Package | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <57.7 W |
Input capacitance of field effect transistor | Ciss | 360 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <10.9 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <180 mΩId, Vgs = 9A, 10V |
MOSFET series | Series | TrenchMOS™ |
Gate charge | QG | 14.7 nCVgs = 10V |
FET Feature | FET Feature | Standard |