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| Parameter | PHM15NQ20T,518 | |
|---|---|---|
IC package | Package | 8-HVSON |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <62.5 W |
Input capacitance of field effect transistor | Ciss | 2.17 nFVds = 30V |
Continuous voltage between drain and source | UDSS | <200 V |
Continuous drain current | IDSS | <17.5 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <85 mΩId, Vgs = 15A, 10V |
MOSFET series | Series | TrenchMOS™ |
Gate charge | QG | 40 nCVgs = 10V |
FET Feature | FET Feature | Standard |